Technical parameters/polarity: NPN
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 32 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 380 @2mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Diotec Semiconductor | 类似代替 |
NXP BCW60D 单晶体管 双极, 通用, NPN, 32 V, 250 MHz, 250 mW, 100 mA, 380 hFE
|
|||
BCW60D
|
Samsung | 类似代替 | SOT-23 |
NXP BCW60D 单晶体管 双极, 通用, NPN, 32 V, 250 MHz, 250 mW, 100 mA, 380 hFE
|
||
|
|
ON Semiconductor | 类似代替 | SOT-23 |
NXP BCW60D 单晶体管 双极, 通用, NPN, 32 V, 250 MHz, 250 mW, 100 mA, 380 hFE
|
||
|
|
Vishay Semiconductor | 类似代替 | SOT-23 |
NXP BCW60D 单晶体管 双极, 通用, NPN, 32 V, 250 MHz, 250 mW, 100 mA, 380 hFE
|
||
BCW60D
|
Allegro MicroSystems | 类似代替 |
NXP BCW60D 单晶体管 双极, 通用, NPN, 32 V, 250 MHz, 250 mW, 100 mA, 380 hFE
|
|||
BCW60D
|
Philips | 类似代替 | TO-236 |
NXP BCW60D 单晶体管 双极, 通用, NPN, 32 V, 250 MHz, 250 mW, 100 mA, 380 hFE
|
||
BCW60D
|
Fairchild | 类似代替 | SOT-23-3 |
NXP BCW60D 单晶体管 双极, 通用, NPN, 32 V, 250 MHz, 250 mW, 100 mA, 380 hFE
|
||
BCW60D
|
NXP | 类似代替 | SOT-23 |
NXP BCW60D 单晶体管 双极, 通用, NPN, 32 V, 250 MHz, 250 mW, 100 mA, 380 hFE
|
||
BCW60D,215
|
Nexperia | 完全替代 | SOT-23-3 |
NXP BCW60D,215 单晶体管 双极, 通用, NPN, 32 V, 250 MHz, 250 mW, 100 mA, 380 hFE
|
||
BCW60D,235
|
NXP | 类似代替 | SOT-23-3 |
TRANS NPN 32V 0.1A SOT23
|
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