Technical parameters/frequency: 250 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.25 W
Technical parameters/breakdown voltage (collector emitter): 32 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 250 @2mA, 5V
Technical parameters/rated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Kexin | 功能相似 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BCW60C
|
Fairchild | 功能相似 | SOT-23-3 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BCW60C
|
CJ | 功能相似 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
|
|
ON Semiconductor | 功能相似 | SOT-23 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BCW60C
|
Plessey | 功能相似 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
|||
BCW60C
|
NXP | 功能相似 | SOT-23 |
NPN外延硅晶体管 NPN EPITAXIAL SILICON TRANSISTOR
|
||
BCW60C,215
|
NXP | 功能相似 | SOT-23-3 |
BCW60 系列 32 V 100 mA 表面贴装 NPN 通用 晶体管 - SOT-23-3
|
||
BCW60C,235
|
NXP | 完全替代 | SOT-23-3 |
TO-236AB NPN 32V 0.1A
|
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