Technical parameters/rated power: 1.3 W
Technical parameters/number of pins: 3
Technical parameters/dissipated power: 1.3 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 10000 @100mA, 5V
Technical parameters/rated power (Max): 1.3 W
Technical parameters/DC current gain (hFE): 10000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/gain bandwidth: 220 MHz
Technical parameters/dissipated power (Max): 1300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/length: 4.6 mm
External dimensions/width: 2.6 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: SOT-89-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCV49,135
|
NXP | 类似代替 | SOT-89-3 |
双极晶体管 - 双极结型晶体管(BJT) TRANS DARLINGTON
|
||
|
|
Zetex | 功能相似 | SOT-89 |
DIODES INC. BCV49TA 单晶体管 双极, 达林顿, NPN, 60 V, 170 MHz, 1 W, 500 mA, 10000 hFE
|
||
BCV49TA
|
Diodes Zetex | 功能相似 | SOT-89-4 |
DIODES INC. BCV49TA 单晶体管 双极, 达林顿, NPN, 60 V, 170 MHz, 1 W, 500 mA, 10000 hFE
|
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