Technical parameters/frequency: 100 MHz
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.25 W
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/dissipated power (Max): 250 mW
Technical parameters/rated voltage: 30 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-253-4
External dimensions/packaging: TO-253-4
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: current mirror
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCV61
|
NXP | 功能相似 | SOT-143 |
NXP BCV61 双极晶体管阵列, NPN, 30 V, 250 mW, 100 mA, 100 hFE, SOT-143B 新
|
||
BCV61
|
TY Semiconductor | 功能相似 |
NXP BCV61 双极晶体管阵列, NPN, 30 V, 250 mW, 100 mA, 100 hFE, SOT-143B 新
|
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