Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 30 @5mA, 5V
Technical parameters/rated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/packaging: SOT-363-6
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PUMB11,115
|
NXP | 功能相似 | SOT-363-6 |
NXP PUMB11,115 双极晶体管阵列, BRT, PNP, -50 V, 200 mW, -100 mA, 30 hFE, SOT-363
|
||
PUMB11,115
|
Nexperia | 功能相似 | SC-70-6 |
NXP PUMB11,115 双极晶体管阵列, BRT, PNP, -50 V, 200 mW, -100 mA, 30 hFE, SOT-363
|
||
UMB11NTN
|
ROHM Semiconductor | 功能相似 | SC-70-6 |
UMB11NTN 编带
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review