Technical parameters/rated voltage (DC): -45.0 V
Technical parameters/rated current: -1.00 A
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 40 @150mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 250
Technical parameters/rated power (Max): 1 W
Technical parameters/DC current gain (hFE): 40
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N2222
|
Central Semiconductor | 功能相似 | TO-18 |
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
|
||
2N2222
|
Micross | 功能相似 |
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
|
|||
2N2222
|
CDIL | 功能相似 |
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
|
|||
2N2222
|
ON Semiconductor | 功能相似 | TO-18 |
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
|
||
2N2222
|
SEME-LAB | 功能相似 |
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
|
|||
2N2222
|
U | 功能相似 |
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
|
|||
2N2222
|
Fairchild | 功能相似 | TO-92-3 |
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
|
||
2N2222
|
Micro Commercial Components | 功能相似 | BCY |
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
|
||
2N2222
|
Philips | 功能相似 |
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
|
|||
2N2222
|
Continental Device | 功能相似 |
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
|
|||
BC636
|
Fairchild | 功能相似 | TO-226-3 |
PNP Silicon AF Transistors (High current gain High collector current)
|
||
|
|
Micro Commercial Components | 功能相似 | TO-92 |
PNP Silicon AF Transistors (High current gain High collector current)
|
||
|
|
ON Semiconductor | 功能相似 | TO-92 |
PNP Silicon AF Transistors (High current gain High collector current)
|
||
BC636
|
Siemens Semiconductor | 功能相似 | TO-92 |
PNP Silicon AF Transistors (High current gain High collector current)
|
||
BC636
|
Secos | 功能相似 |
PNP Silicon AF Transistors (High current gain High collector current)
|
|||
BC636
|
CDIL | 功能相似 |
PNP Silicon AF Transistors (High current gain High collector current)
|
|||
BC636
|
CJ | 功能相似 | TO-92 |
PNP Silicon AF Transistors (High current gain High collector current)
|
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