Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 160
Technical parameters/Maximum current amplification factor (hFE): 400
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/packaging: SOT-323-3
Other/Product Lifecycle: Active
Other/Minimum Packaging: 3000
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC807,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP BC807,215 单晶体管 双极, 通用, PNP, -45 V, 80 MHz, 250 mW, -500 mA, 100 hFE
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BC807-25W
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Infineon | 功能相似 | SOT-323 |
Surface mount Si-Epitaxial PlanarTransistors
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ON Semiconductor | 功能相似 | SOT-323-3 |
Surface mount Si-Epitaxial PlanarTransistors
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Panjit | 功能相似 | SOT-323 |
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BC807-25W
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Diotec Semiconductor | 功能相似 |
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BC807-25W,115
|
NXP | 功能相似 | SOT-323-3 |
PNP 晶体管,NXP ### 双极性晶体管,NXP Semiconductors
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Philips | 功能相似 | SC-70 |
PNP 晶体管,NXP ### 双极性晶体管,NXP Semiconductors
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BC807DS,115
|
NXP | 功能相似 | SC-74-6 |
BC 系列 45 V 500 mA 表面贴装 PNP 硅 通用 晶体管 - SOT-457
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