Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -300 mA
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.3A
Technical parameters/minimum current amplification factor (hFE): 60 @2mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 300
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/length: 5.2 mm
External dimensions/width: 4.19 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-92-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC1845
|
Renesas Electronics | 功能相似 | TO-92 |
TO-92 NPN 120V 0.05A
|
||
BC184C
|
CDIL | 功能相似 |
0.35W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.1A Ic, 100 - hFE
|
|||
BC308
|
Micro Electronics | 功能相似 |
PNP外延硅晶体管 PNP EPITAXIAL SILICON TRANSISTOR
|
|||
PN2369
|
ON Semiconductor | 功能相似 | TO-226-3 |
NPN开关晶体管 NPN Switching Transistor
|
||
PN2369
|
Fairchild | 功能相似 | TO-226-3 |
NPN开关晶体管 NPN Switching Transistor
|
||
|
|
Continental Device | 功能相似 |
NPN开关晶体管 NPN Switching Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review