Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 180 @2mA, 5V
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC182B
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管放大器晶体管 Amplifier Transistors Amplifier Transistors
|
||
BC182B
|
NXP | 完全替代 | TO-92 |
放大器晶体管放大器晶体管 Amplifier Transistors Amplifier Transistors
|
||
BC182B
|
Fairchild | 完全替代 | TO-92-3 |
放大器晶体管放大器晶体管 Amplifier Transistors Amplifier Transistors
|
||
BC182B
|
CDIL | 完全替代 |
放大器晶体管放大器晶体管 Amplifier Transistors Amplifier Transistors
|
|||
BC182B
|
Rochester | 完全替代 | TO-92 |
放大器晶体管放大器晶体管 Amplifier Transistors Amplifier Transistors
|
||
BC182BG
|
ON Semiconductor | 完全替代 | TO-226-3 |
放大器晶体管放大器晶体管 Amplifier Transistors Amplifier Transistors
|
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