Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/maximum allowable collector current: 0.1A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-18
External dimensions/packaging: TO-18
Other/Product Lifecycle: Active
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5366
|
Central Semiconductor | 功能相似 | TO-226-3 |
t-Pnp Si-Gen Pur Amp Sw
|
||
2N5366
|
NTE Electronics | 功能相似 |
t-Pnp Si-Gen Pur Amp Sw
|
|||
2N5366
|
Freescale | 功能相似 | TO-92 |
t-Pnp Si-Gen Pur Amp Sw
|
||
2N5366
|
Fairchild | 功能相似 | TO-226-3 |
t-Pnp Si-Gen Pur Amp Sw
|
||
2N5366
|
ON Semiconductor | 功能相似 | TO-92 |
t-Pnp Si-Gen Pur Amp Sw
|
||
BC107B
|
New Jersey Semiconductor | 功能相似 | 3 |
0.6W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.2A Ic, 40 hFE.
|
||
|
|
Semelab | 功能相似 | BCY |
0.6W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.2A Ic, 40 hFE.
|
||
|
|
Infineon | 功能相似 | TO-18 |
0.6W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.2A Ic, 40 hFE.
|
||
BC107B
|
Continental Device | 功能相似 |
0.6W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.2A Ic, 40 hFE.
|
|||
BC107B
|
NXP | 功能相似 | BCY |
0.6W General Purpose NPN Metal Can Transistor. 45V Vceo, 0.2A Ic, 40 hFE.
|
||
|
|
Philips | 功能相似 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
|||
|
|
U | 功能相似 | TO-92 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
BC559B
|
Diotec Semiconductor | 功能相似 | TO-92 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
BC559B
|
Rochester | 功能相似 | TO-92 |
Transistor: PNP; bipolar; 30V; 100mA; 0.5W(1/2W); TO92
|
||
PN5138
|
ON Semiconductor | 功能相似 | TO-226-3 |
PNP通用放大器 PNP General Purpose Amplifier
|
||
PN5138
|
Freescale | 功能相似 |
PNP通用放大器 PNP General Purpose Amplifier
|
|||
PN5138
|
Central Semiconductor | 功能相似 | TO-92-3 |
PNP通用放大器 PNP General Purpose Amplifier
|
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