Technical parameters/drain source resistance: 5.8 mΩ
Technical parameters/polarity: P-CH
Technical parameters/dissipated power: 90 W
Technical parameters/threshold voltage: -2.6V
Technical parameters/drain source voltage (Vds): -60V
Technical parameters/Continuous drain current (Ids): 100A
Encapsulation parameters/Encapsulation: TO-263-2
External dimensions/packaging: TO-263-2
Other/Product Lifecycle: Active
Other/Minimum Packaging: 800
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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|
ON Semiconductor | 功能相似 | TO-263-2 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
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