Technical parameters/number of pins: 3
Technical parameters/forward voltage: 960mV @100mA
Technical parameters/dissipated power: 250 mW
Technical parameters/thermal resistance: 500℃/W (RθJA)
Technical parameters/forward current: 200 mA
Technical parameters/voltage regulation value: 5 V
Technical parameters/forward voltage (Max): 960 mV
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: 150℃ (Max)
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -65℃ ~ 150℃
Physical parameters/temperature coefficient: -1.8 MV/K
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: medical
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAS17
|
Nexperia | 完全替代 | TO-236 |
Small Signal Diode, Single, 200mA, 960mV
|
||
BAS17
|
Philips | 完全替代 | TO-236 |
Small Signal Diode, Single, 200mA, 960mV
|
||
BAS17-T
|
NXP | 功能相似 | SOT-23 |
DIODE SILICON, STABISTOR DIODE, TO-236AB, PLASTIC PACKAGE-3, Stabistor Diode
|
||
|
|
Central Semiconductor | 功能相似 | SOT-23 |
Stabistor Diode, 0.96V V(FM), Silicon, SOT-23, 3Pin
|
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