Technical parameters/rated voltage (DC): -40.0 V
Technical parameters/rated current: -2.00 A
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 1000
Technical parameters/Maximum current amplification factor (hFE): 1000
Technical parameters/rated power (Max): 1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 1 W
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.5 mm
External dimensions/width: 5.5 mm
External dimensions/height: 2.3 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SB1183
|
ROHM Semiconductor | 类似代替 | CPT-3 |
达林顿连接高直流电流增益。 Darlington connection for high DC current gain.
|
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