Technical parameters/drain source resistance: 40 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 1 W
Technical parameters/product series: AUIRLL2705
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/leakage source breakdown voltage: 55 V
Technical parameters/Continuous drain current (Ids): 5.2A
Technical parameters/rise time: 12 ns
Technical parameters/Input capacitance (Ciss): 870pF @25V(Vds)
Technical parameters/descent time: 22 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.5 mm
External dimensions/width: 3.5 mm
External dimensions/height: 1.6 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Port Injection
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
AUIRLL2705TR
|
Infineon | 类似代替 | TO-261-4 |
晶体管, MOSFET, N沟道, 5.2 A, 55 V, 0.04 ohm, 10 V, 2 V
|
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