Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 5 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 6.25 W
Technical parameters/threshold voltage: 2 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 520 mA
Technical parameters/Input capacitance (Ciss): 40pF @10V(Vds)
Technical parameters/rated power (Max): 6.25 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 6.25W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/length: 6.7 mm
External dimensions/width: 3.7 mm
External dimensions/height: 1.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSP110
|
NXP | 功能相似 | SC-73 |
Small Signal Field-Effect Transistor, 0.325A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
|
||
BSP110
|
Philips | 功能相似 |
Small Signal Field-Effect Transistor, 0.325A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
|
|||
BSP110,115
|
NXP | 类似代替 | TO-261-4 |
N 通道 MOSFET，100V 及更高，Nexperia ### MOSFET 晶体管，NXP Semiconductors
|
||
BSP110,115
|
Nexperia | 类似代替 | TO-261-4 |
N 通道 MOSFET，100V 及更高，Nexperia ### MOSFET 晶体管，NXP Semiconductors
|
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