Technical parameters/frequency: 2 GHz
Technical parameters/rated voltage (DC): 3.00 V
Technical parameters/rated current: 100 mA
Technical parameters/dissipated power: 500 mW
Technical parameters/drain source voltage (Vds): 3 V
Technical parameters/leakage source breakdown voltage: 5 V
Technical parameters/breakdown voltage of gate source: ±5 V
Technical parameters/Continuous drain current (Ids): 100 mA
Technical parameters/output power: 19 dBm
Technical parameters/gain: 16.5 dB
Technical parameters/test current: 30 mA
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-323-4
External dimensions/packaging: SOT-323-4
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ATF-58143-BLKG
|
Broadcom | 完全替代 | SOT-343 |
BROADCOM LIMITED ATF-58143-BLKG 晶体管, 射频FET, 硅, 3 V, 500 mA, 500 mW, 450 MHz, 6 GHz, SOT-343
|
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