Technical parameters/frequency: 65 MHz
Technical parameters/rated current: 6.5 A
Technical parameters/dissipated power: 250000 mW
Technical parameters/drain source voltage (Vds): 1000 V
Technical parameters/rise time: 5 ns
Technical parameters/output power: 150 W
Technical parameters/gain: 15 dB
Technical parameters/Input capacitance (Ciss): 1700pF @50V(Vds)
Technical parameters/descent time: 10.1 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250000 mW
Technical parameters/rated voltage: 1000 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-247-3
External dimensions/height: 21.46 mm
External dimensions/packaging: TO-247-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ARF461A
|
Microsemi | 功能相似 | TO-247-3 |
RF功率MOSFET N沟道增强模式 RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
||
|
|
Microchip | 类似代替 | TO-247-3 |
RF功率MOSFET N沟道增强模式 RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
||
ARF461AG
|
Microsemi | 类似代替 | TO-247-3 |
RF功率MOSFET N沟道增强模式 RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
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