Technical parameters/rated voltage (DC): 1.00 kV
Technical parameters/rated current: 37.0 A
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 694 W
Technical parameters/input capacitance: 9.75 nF
Technical parameters/gate charge: 395 nC
Technical parameters/drain source voltage (Vds): 1000 V
Technical parameters/Continuous drain current (Ids): 37.0 A
Technical parameters/rise time: 22 ns
Technical parameters/Input capacitance (Ciss): 9750pF @25V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 694W (Tc)
Encapsulation parameters/installation method: Screw
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: SOT-227-4
External dimensions/packaging: SOT-227-4
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
APT10025JVR
|
Microsemi | 类似代替 | SOT-227 |
Trans MOSFET N-CH 1kV 34A 4Pin SOT-227
|
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