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Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Packaging/Shell: SOIC-8
Other/Td (on) (ns): 4.5
Other/Cos (pF): 70
Other/FET types: N-Channel
Other/Gate Voltage Vgs: 20V
Other/Rds On (Max) @ Id, Vgs: 20mΩ@10V
Other/Crss (pF): 60
Other/drain source voltage Vds: 30V
Other/Rds On (Max) @ 4.5V: 26mΩ
Other/ESD Dior: No
Other/Ciss (pF): 600
Other/Terr (ns): 5
Other/Qrr (nC): 6
Other/Td (off) (ns): 20
Other/VGS (th): 2.3
Other/QG * (nC): 6
Other/Pd - power dissipation (Max): 1.7W
Other/continuous drain current Id: 7A
Other Schottky Dior: No
Other/Qgd (nC): 2.5
Compliant with standards/RoHS standards: RoHS Compliant
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