Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 1.4 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 5.8A
Technical parameters/rise time: 2.4 ns
Technical parameters/Input capacitance (Ciss): 820pF @15V(Vds)
Technical parameters/rated power (Max): 1.4 W
Technical parameters/descent time: 2.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.4W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDN372S
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ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN372S 晶体管, MOSFET, N沟道, 2.6 A, 30 V, 40 mohm, 10 V, 1.4 V
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Freescale | 功能相似 |
FAIRCHILD SEMICONDUCTOR FDN372S 晶体管, MOSFET, N沟道, 2.6 A, 30 V, 40 mohm, 10 V, 1.4 V
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