Technical parameters/power supply voltage (DC): 3.00V (min)
Technical parameters/power supply current: 216 mA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/digits: 11
Technical parameters/dissipated power: 940 mW
Technical parameters/sampling rate: 125 Msps
Technical parameters/power consumption: 740 mW
Technical parameters/Analog to Digital Conversion (ADC): 2
Technical parameters/number of inputs: 2
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1225 mW
Technical parameters/number of input channels: 2
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 64
Encapsulation parameters/Encapsulation: VQFN-64
External dimensions/width: 9 mm
External dimensions/packaging: VQFN-64
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ADS62P15IRGC25
|
TI | 完全替代 | VQFN-64 |
双通道11位, 125 MSPS ADC,具有并行CMOS / DDR LVDS输出 Dual Channel 11-Bits,125 MSPS ADC With Parallel CMOS/DDR LVDS Outputs
|
||
ADS62P48IRGCT
|
TI | 类似代替 | VQFN-64 |
双通道14位/ 12位, 250 / 210 - MSPS ADC,具有DDR LVDS和并行CMOS输出 Dual Channel 14-/12-Bit, 250-/210-MSPS ADC With DDR LVDS and Parallel CMOS Outputs
|
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