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Technical parameters/output current: 190 mA
Technical parameters/power supply current: 5.1 mA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/conversion rate: 2.10 kV/μs
Technical parameters/gain: 1.00 dB
Technical parameters/input compensation voltage: 3 mV
Technical parameters/input bias current: 40000 nA
Technical parameters/available channels: S, T
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/3dB bandwidth: 280 MHz
Technical parameters/gain bandwidth: 280 MHz
Technical parameters/power supply voltage (Max): 12 V
Technical parameters/power supply voltage (Min): 5 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.91 mm
External dimensions/height: 1.58 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Manufacturing Applications: Industrial, portable equipment, signal processing, imaging, video, and visual inspection
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUF634U
|
TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS BUF634U. 芯片, 放大缓冲器, 高速
|
||
|
|
Burr Brown | 完全替代 |
具有禁用功能的宽带固定增益缓冲器放大器 8-SOIC -40 to 85
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