Technical parameters/dissipated power: 2.00 W
Technical parameters/drain source voltage (Vds): -20.0 V
Technical parameters/rise time: 46.0 ns
Encapsulation parameters/Encapsulation: SOT
External dimensions/packaging: SOT
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI9933ADY
|
Vishay Siliconix | 功能相似 | SOT |
双P沟道PowerTrench MOSFET Dual P-Channel PowerTrench MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review