Technical parameters/forward current (Max): 90 A
Encapsulation parameters/installation method: Chassis
Encapsulation parameters/Encapsulation: MTK
External dimensions/packaging: MTK
Physical parameters/operating temperature: -40℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
111MT120KPBF
|
Vishay Semiconductor | 功能相似 | INT-A-PAK |
Silicon Controlled Rectifier, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 3 Element, ROHS COMPLIANT, INT-A-PAK-9
|
||
111MT120KPBF
|
Vishay Intertechnology | 功能相似 |
Silicon Controlled Rectifier, 110000mA I(T), 1200V V(DRM), 1200V V(RRM), 3 Element, ROHS COMPLIANT, INT-A-PAK-9
|
|||
|
|
Infineon | 功能相似 |
Silicon Controlled Rectifier, 110000mA I(T), 800V V(RRM), 3 Element,
|
|||
111MT80KPBF
|
Vishay Semiconductor | 功能相似 | INT-A-PAK |
Silicon Controlled Rectifier, 110000mA I(T), 800V V(RRM), 3 Element,
|
||
111MT80KPBF
|
VISHAY | 功能相似 | INT-A-PAK |
Silicon Controlled Rectifier, 110000mA I(T), 800V V(RRM), 3 Element,
|
||
51MT120KPBF
|
Infineon | 功能相似 |
Silicon Controlled Rectifier, 55000mA I(T), 1200V V(RRM), 3 Element,
|
|||
51MT120KPBF
|
Vishay Intertechnology | 功能相似 |
Silicon Controlled Rectifier, 55000mA I(T), 1200V V(RRM), 3 Element,
|
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