Technical parameters/breakdown voltage: -25.0 V|25 V
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 50 Ω
Technical parameters/dissipated power: 250 mW
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/leakage source breakdown voltage: 25 V
Technical parameters/breakdown voltage of gate source: 25 V
Technical parameters/Input capacitance (Ciss): 5pF @10V(Vds)
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMBFJ308
|
NXP | 完全替代 | SOT-23-3 |
N 通道 JFET，NXP ### JFET 晶体管 一系列 JFET（接线场效应晶体管）和 HEMT/HFET（高电子迁移率晶体管/异质结 FET）分立半导体设备。
|
||
PMBFJ308,215
|
NXP | 完全替代 | SOT-23-3 |
NXP PMBFJ308,215 N通道 JFET 晶体管, Vds=25 V, Idss: 12 → 60mA, 3引脚 SOT-23 (TO-236AB)封装
|
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