Technical parameters/rated current: 300 A
Technical parameters/forward current: 300 A
Technical parameters/forward current (Max): 300000 mA
Technical parameters/operating temperature (Max): 180 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-9
External dimensions/packaging: DO-9
Physical parameters/operating temperature: -40℃ ~ 180℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/HTS code: 85411000800
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NJS | 功能相似 | 2 |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
|
|
Microsemi | 功能相似 | DO-5 |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
|
|
Microchip | 功能相似 | DO-203AB-2 |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
|
|
Vishay Intertechnology | 功能相似 | DO-5 |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
1N1187
|
GeneSiC Semiconductor | 功能相似 | DO-203AB |
电源硅整流二极管， 35 A / 40 A / 60 A Power Silicon Rectifier Diodes, 35 A/40 A/60 A
|
||
|
|
Microsemi | 功能相似 | DO-9 |
DIODE GEN PURP 150V 275A DO205AB
|
||
1N4046
|
International Rectifier | 功能相似 | DO-9 |
DIODE GEN PURP 150V 275A DO205AB
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review