Technical parameters/polarity: PNP
Technical parameters/dissipated power: 160 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 20A
Technical parameters/minimum current amplification factor (hFE): 750
Technical parameters/Maximum current amplification factor (hFE): 18000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/Encapsulation: TO-204-2
External dimensions/length: 39.37 mm
External dimensions/width: 26.67 mm
External dimensions/height: 8.51 mm
External dimensions/packaging: TO-204-2
Other/Product Lifecycle: Obsolete
Other/Minimum Packaging: 100
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ETC | 功能相似 |
Power Bipolar Transistor,
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Microchip | 功能相似 |
Power Bipolar Transistor,
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Microsemi | 功能相似 | TO-3 |
Power Bipolar Transistor,
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Central Semiconductor | 功能相似 | TO-204 |
Power Bipolar Transistor,
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ON Semiconductor | 功能相似 | TO-204-2 |
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2N6286G
|
ON Semiconductor | 类似代替 | TO-204-2 |
ON SEMICONDUCTOR 2N6286G 达林顿双极晶体管
|
||
2N6286G
|
NXP | 类似代替 | TO-204 |
ON SEMICONDUCTOR 2N6286G 达林顿双极晶体管
|
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