Technical parameters/breakdown voltage: 83.3 V
Technical parameters/dissipated power: 5 kW
Technical parameters/clamp voltage: 121 V
Technical parameters/peak pulse power: 5000 W
Technical parameters/minimum reverse breakdown voltage: 83.3 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: CASE P600
External dimensions/length: 9.1 mm
External dimensions/packaging: CASE P600
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
5KP75A-E3/54
|
VISHAY | 完全替代 | P-600 |
TRANSZORB® 瞬态电压抑制器轴向单向 5000W,Vishay Semiconductor P600 封装,带玻璃钝化接头 极佳的夹持能力 非常快的响应时间 低增量抗浪涌性 符合汽车 AEC-Q101 规格 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
5KP75A-E3/54
|
Vishay Siliconix | 完全替代 |
TRANSZORB® 瞬态电压抑制器轴向单向 5000W,Vishay Semiconductor P600 封装,带玻璃钝化接头 极佳的夹持能力 非常快的响应时间 低增量抗浪涌性 符合汽车 AEC-Q101 规格 ### 瞬态电压抑制器,Vishay Semiconductor
|
|||
5KP75A-E3/54
|
Vishay Semiconductor | 完全替代 | P600, Axial |
TRANSZORB® 瞬态电压抑制器轴向单向 5000W,Vishay Semiconductor P600 封装,带玻璃钝化接头 极佳的夹持能力 非常快的响应时间 低增量抗浪涌性 符合汽车 AEC-Q101 规格 ### 瞬态电压抑制器,Vishay Semiconductor
|
||
5KP75AHE3/54
|
Vishay Semiconductor | 类似代替 | P600, Axial |
Diode TVS Single Uni-Dir 75V 5kW 2Pin Case P600 T/R
|
||
|
|
VISHAY | 完全替代 | P600 |
ESD 抑制器/TVS 二极管 5KW 75V 5% Unidir AEC-Q101 Qualified
|
||
5KP75AHE3/73
|
Vishay Semiconductor | 完全替代 | P600 |
ESD 抑制器/TVS 二极管 5KW 75V 5% Unidir AEC-Q101 Qualified
|
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