Technical parameters/working voltage: 33 V
Technical parameters/breakdown voltage: 36.7 V
Technical parameters/clamp voltage: 53.3 V
Technical parameters/peak pulse power: 5000 W
Technical parameters/minimum reverse breakdown voltage: 36.7 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: P600, Axial
External dimensions/length: 9.1 mm
External dimensions/packaging: P600, Axial
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape, Ammo Pack
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
5KP33A-E3/54
|
Vishay Semiconductor | 完全替代 | P-600 |
TRANSZORB® 瞬态电压抑制器轴向单向 5000W，Vishay Semiconductor P600 封装，带玻璃钝化接头 极佳的夹持能力 非常快的响应时间 低增量抗浪涌性 符合汽车 AEC-Q101 规格 ### 瞬态电压抑制器，Vishay Semiconductor
|
||
5KP33A-E3/54
|
Vishay Intertechnology | 完全替代 |
TRANSZORB® 瞬态电压抑制器轴向单向 5000W，Vishay Semiconductor P600 封装，带玻璃钝化接头 极佳的夹持能力 非常快的响应时间 低增量抗浪涌性 符合汽车 AEC-Q101 规格 ### 瞬态电压抑制器，Vishay Semiconductor
|
|||
5KP33AHE3/73
|
Vishay Semiconductor | 完全替代 | P600 |
ESD 抑制器/TVS 二极管 5KW 33V 5% Unidir AEC-Q101 Qualified
|
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