Encapsulation parameters/Encapsulation: TO-252
External dimensions/packaging: TO-252
Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): 80V
Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): 50V
Other/Collector Continuous Output Current (IC): 5A
Other/Cut off Frequency fTTransmission Frequency (fT): 400MHz
Other/DC current gain hFEDC Current Gain (hFE): 200~560
Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: 90mV
Other/dissipated power PcPower Dissipation: 800mW/0.8W
Other/Specification PDF: __
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC5706
|
Sanyo Semiconductor | 功能相似 | TO-252 |
双极型晶体管( - ) 50V ,( - ) 5A,低VCE (饱和),( PNP)的NPN单TP / TP -FA Bipolar Transistor (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
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