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Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 1A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5416
|
ST Microelectronics | 功能相似 | TO-39 |
STMICROELECTRONICS 2N5416 单晶体管 双极, PNP, -300 V, 15 MHz, 10 W, -1 A, 30 hFE
|
||
|
|
ETC | 功能相似 |
STMICROELECTRONICS 2N5416 单晶体管 双极, PNP, -300 V, 15 MHz, 10 W, -1 A, 30 hFE
|
|||
2N5416
|
Central Semiconductor | 功能相似 | TO-39-3 |
STMICROELECTRONICS 2N5416 单晶体管 双极, PNP, -300 V, 15 MHz, 10 W, -1 A, 30 hFE
|
||
2N5416
|
Microsemi | 功能相似 | TO-5 |
STMICROELECTRONICS 2N5416 单晶体管 双极, PNP, -300 V, 15 MHz, 10 W, -1 A, 30 hFE
|
||
2N5416
|
CDIL | 功能相似 |
STMICROELECTRONICS 2N5416 单晶体管 双极, PNP, -300 V, 15 MHz, 10 W, -1 A, 30 hFE
|
|||
2N5416
|
NTE Electronics | 功能相似 |
STMICROELECTRONICS 2N5416 单晶体管 双极, PNP, -300 V, 15 MHz, 10 W, -1 A, 30 hFE
|
|||
2N5416
|
Semelab | 功能相似 | TO-39 |
STMICROELECTRONICS 2N5416 单晶体管 双极, PNP, -300 V, 15 MHz, 10 W, -1 A, 30 hFE
|
||
JANTXV2N5416S
|
Microsemi | 功能相似 | TO-39 |
PNP小功率硅晶体管 PNP LOW POWER SILICON TRANSISTOR
|
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