Technical parameters/frequency: 100 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.15A
Technical parameters/minimum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/Maximum current amplification factor (hFE): 120 @1mA, 6V
Technical parameters/rated power (Max): 150 mW
Technical parameters/DC current gain (hFE): 120
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 0.15 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-416
External dimensions/length: 1.8 mm
External dimensions/width: 0.9 mm
External dimensions/height: 0.85 mm
External dimensions/packaging: SOT-416
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management, Communications & Networking, Consumer Electronics
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs Information/Hong Kong Import and Export License: NLR
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC847ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847ALT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
||
BC847CLT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC847CLT1G 单晶体管 双极, 通用, NPN, 45 V, 100 MHz, 300 mW, 100 mA, 100 hFE
|
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