Technical parameters/drain source resistance: 250 Ω
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 375 mW
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/leakage source breakdown voltage: -40.0 V
Technical parameters/breakdown voltage of gate source: ±30.0 V
Technical parameters/Continuous drain current (Ids): -50.0 mA
Technical parameters/Input capacitance (Ciss): 3.5pF @15V(Vds)
Technical parameters/rated power (Max): 375 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-72
External dimensions/packaging: TO-72
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
3N163-E3
|
Vishay Siliconix | 类似代替 | TO-72 |
TRANSISTOR 50mA, 40V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF, ROHS COMPLIANT, HERMETIC SEALED, TO-72, 4Pin, FET General Purpose Small Signal
|
||
3N163-E3
|
Vishay Intertechnology | 类似代替 |
TRANSISTOR 50mA, 40V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF, ROHS COMPLIANT, HERMETIC SEALED, TO-72, 4Pin, FET General Purpose Small Signal
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review