Technical parameters/drain source resistance: 250 Ω
Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Continuous drain current (Ids): 5mA
Technical parameters/dissipated power (Max): 375mW (Ta)
Encapsulation parameters/Encapsulation: TO-72-4
External dimensions/packaging: TO-72-4
Other/Minimum Packaging: 200
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
3N163-E3
|
Vishay Siliconix | 类似代替 | TO-72 |
TRANSISTOR 50mA, 40V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF, ROHS COMPLIANT, HERMETIC SEALED, TO-72, 4Pin, FET General Purpose Small Signal
|
||
3N163-E3
|
Vishay Intertechnology | 类似代替 |
TRANSISTOR 50mA, 40V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-206AF, ROHS COMPLIANT, HERMETIC SEALED, TO-72, 4Pin, FET General Purpose Small Signal
|
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