Technical parameters/drain source resistance: 125 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 1.15 W
Technical parameters/breakdown voltage of gate source: ±8.00 V
Technical parameters/Continuous drain current (Ids): -2.50 A to 2.50 A
Encapsulation parameters/Encapsulation: SOT-163
External dimensions/packaging: SOT-163
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
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