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Model SI3812DV-T1
Description NChannel 20-V (D-S) MOSFET and Schottky diode N-Channel 20-V (D-S) MOSFET with Schottky diode
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Brand: Vishay Semiconductor
Packaging TSOP
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(8283) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 20.0 V

Technical parameters/drain source resistance: 125 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 830 mW

Technical parameters/leakage source breakdown voltage: 20.0 V

Technical parameters/breakdown voltage of gate source: ±12.0 V

Technical parameters/Continuous drain current (Ids): 2.40 A

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 6

Encapsulation parameters/Encapsulation: TSOP

External dimensions/packaging: TSOP

Compliant with standards/RoHS standards: Non-Compliant

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