Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/Continuous drain current (Ids): 73A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Product Lifecycle: Obsolete
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQPF55N10
|
ON Semiconductor | 功能相似 | TO-220-3 |
100V N沟道MOSFET 100V N-Channel MOSFET
|
||
|
|
Samsung | 功能相似 | TO-220 |
先进的功率MOSFET Advanced Power MOSFET
|
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