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Model 2STC2510
Description High power NPN epitaxial planar bipolar transistor
Product QR code
Brand: ST Microelectronics
Packaging TO-3-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
10.35  yuan 10.35yuan
5+:
$ 12.1142
50+:
$ 11.5965
200+:
$ 11.3066
500+:
$ 11.2341
1000+:
$ 11.1616
2500+:
$ 11.0788
5000+:
$ 11.0270
7500+:
$ 10.9752
Quantity
5+
50+
200+
500+
1000+
Price
$12.1142
$11.5965
$11.3066
$11.2341
$11.1616
Price $ 12.1142 $ 11.5965 $ 11.3066 $ 11.2341 $ 11.1616
Start batch production 5+ 50+ 200+ 500+ 1000+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6109) Minimum order quantity(5)
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Technical parameters/polarity: NPN

Technical parameters/dissipated power: 125000 mW

Technical parameters/gain bandwidth product: 20 MHz

Technical parameters/breakdown voltage (collector emitter): 100 V

Technical parameters/maximum allowable collector current: 25A

Technical parameters/minimum current amplification factor (hFE): 40 @12A, 4V

Technical parameters/Maximum current amplification factor (hFE): 40

Technical parameters/rated power (Max): 125 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 65 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-3-3

External dimensions/length: 15.8 mm

External dimensions/width: 5 mm

External dimensions/height: 18.7 mm

External dimensions/packaging: TO-3-3

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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