Technical parameters/dissipated power: 100 mW
Technical parameters/drain source voltage (Vds): 40 V
Technical parameters/Input capacitance (Ciss): 1.7pF @10V(Vds)
Technical parameters/rated power (Max): 125 mW
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Impedance converter applications, Infrared sensor
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SK545-11D-TB-E
|
ON Semiconductor | 功能相似 | SOT-23-3 |
Small Signal Field-Effect Transistor
|
||
2SK545-11D-TB-E
|
Sanyo Semiconductor | 功能相似 |
Small Signal Field-Effect Transistor
|
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