Technical parameters/rated voltage (DC): 900 V
Technical parameters/rated current: 3.00 A
Technical parameters/dissipated power: 40 W
Technical parameters/drain source voltage (Vds): 900 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rise time: 20.0 ns
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220
External dimensions/packaging: TO-220
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP3NK90ZFP
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP3NK90ZFP 功率场效应管, MOSFET, N沟道, 3 A, 900 V, 4.8 ohm, 10 V, 3.75 V
|
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