Technical parameters/dissipated power: 1 W
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/rise time: 4 ns
Technical parameters/Input capacitance (Ciss): 720pF @10V(Vds)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251
External dimensions/packaging: TO-251
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Kexin | 完全替代 |
Trans MOSFET P-CH 60V 12A 3Pin(3+Tab) TO-251
|
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|
|
NEC | 完全替代 |
Trans MOSFET P-CH 60V 12A 3Pin(3+Tab) TO-251
|
|||
2SJ598
|
Renesas Electronics | 完全替代 | TO-251 |
Trans MOSFET P-CH 60V 12A 3Pin(3+Tab) TO-251
|
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