Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 2.00 A
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/minimum current amplification factor (hFE): 1000 @1A, 2V
Technical parameters/rated power (Max): 1 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: SIP-3
External dimensions/packaging: SIP-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Box (TB)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSD986
|
Samsung | 功能相似 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
|
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