Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1000 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 2A
Technical parameters/dissipated power (Max): 1000 mW
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: 135AB
External dimensions/packaging: 135AB
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Toshiba | 功能相似 | TO-92 |
2A , 30V NPN Plastic Encapsulated Transistor
|
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2SC3279
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Secos | 功能相似 |
2A , 30V NPN Plastic Encapsulated Transistor
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|||
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|
ON Semiconductor | 功能相似 | 135AB |
2000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN
|
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2SD1207-S
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Sanyo Semiconductor | 功能相似 |
2000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN
|
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NTE2363
|
NTE Electronics | 功能相似 |
NPN 50V 4A
|
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