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Model 2SB1236TV2R
Description Bipolar Transistor - Bipolar Junction Transistor (BJT) DVR PNP 120V 1.5A
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Brand: ROHM Semiconductor
Packaging SIP-3
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Packaging method Tape & Box (TB)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5616) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): -120 V

Technical parameters/rated current: -1.50 A

Technical parameters/polarity: PNP

Technical parameters/dissipated power: 1000 mW

Technical parameters/breakdown voltage (collector emitter): 120 V

Technical parameters/maximum allowable collector current: 1.5A

Technical parameters/minimum current amplification factor (hFE): 180 @100mA, 5V

Technical parameters/Maximum current amplification factor (hFE): 180 @100mA, 5V

Technical parameters/rated power (Max): 1 W

Technical parameters/operating temperature (Max): 150 ℃

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: SIP-3

External dimensions/length: 6.8 mm

External dimensions/width: 2.5 mm

External dimensions/height: 4.4 mm

External dimensions/packaging: SIP-3

Physical parameters/operating temperature: 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Box (TB)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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