Technical parameters/polarity: NPN
Technical parameters/dissipated power: 250 mW
Technical parameters/gain bandwidth product: 160 MHz
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 120 @150mA, 10V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3.1 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1.2 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Nexperia | 类似代替 | SOT-23-3 |
TO-236AB NPN 50V 0.5A
|
||
2PD602ARL,215
|
NXP | 类似代替 | SOT-23-3 |
TO-236AB NPN 50V 0.5A
|
||
MSD602-RT1G
|
ON Semiconductor | 功能相似 | SC-59-3 |
NPN通用放大器晶体管表面贴装 NPN General Purpose Amplifier Transistor Surface Mount
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review