Technical parameters/drain source resistance: 800 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 20000 mW
Technical parameters/product series: IRFF220
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/leakage source breakdown voltage: 200 V
Technical parameters/Continuous drain current (Ids): 3.50 A
Technical parameters/Input capacitance (Ciss): 260pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 20000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-205
External dimensions/height: 4.54 mm
External dimensions/packaging: TO-205
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6790
|
Infineon | 功能相似 | 3 |
Trans MOSFET N-CH 200V 3.5A 3Pin TO-39
|
||
|
|
Microchip | 功能相似 | TO-205-3 |
Trans MOSFET N-CH 200V 3.5A 3Pin TO-39
|
||
2N6790
|
Microsemi | 功能相似 | TO-39 |
Trans MOSFET N-CH 200V 3.5A 3Pin TO-39
|
||
2N6790
|
International Rectifier | 功能相似 | TO-205 |
Trans MOSFET N-CH 200V 3.5A 3Pin TO-39
|
||
2N6790
|
Fairchild | 功能相似 |
Trans MOSFET N-CH 200V 3.5A 3Pin TO-39
|
|||
2N6790.MODR1
|
Semelab | 功能相似 | BCY |
3.5A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN
|
||
IRFF220
|
Intersil | 功能相似 |
Trans MOSFET N-CH 200V 3.5A 3Pin TO-39
|
|||
IRFF220
|
Infineon | 功能相似 | TO-205 |
Trans MOSFET N-CH 200V 3.5A 3Pin TO-39
|
||
JANTX2N6790
|
Microsemi | 功能相似 | TO-205-3 |
Trans MOSFET N-CH 200V 3.5A 3Pin TO-39
|
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