Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 350 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92
External dimensions/packaging: TO-92
Other/Product Lifecycle: End of Life
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6520TA
|
ON Semiconductor | 类似代替 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR 2N6520TA 单晶体管 双极, PNP, -350 V, 200 MHz, 625 mW, 20 hFE
|
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