Technical parameters/dissipated power: 625 mW
Technical parameters/breakdown voltage: 25 V
Technical parameters/Input capacitance (Ciss): 7pF @15V(Vds)
Technical parameters/rated power (Max): 625 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/height: 5.33 mm
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Box (TB)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5457
|
ON Semiconductor | 完全替代 | TO-92-3 |
N沟道通用放大器 N-Channel General Purpose Amplifier
|
||
2N5457
|
Freescale | 完全替代 |
N沟道通用放大器 N-Channel General Purpose Amplifier
|
|||
2N5457
|
New Jersey Semiconductor | 完全替代 |
N沟道通用放大器 N-Channel General Purpose Amplifier
|
|||
2N5457
|
Calogic | 完全替代 |
N沟道通用放大器 N-Channel General Purpose Amplifier
|
|||
2N5457
|
Fairchild | 完全替代 | TO-226-3 |
N沟道通用放大器 N-Channel General Purpose Amplifier
|
||
2N5457
|
Major Brands | 完全替代 | TO-92 |
N沟道通用放大器 N-Channel General Purpose Amplifier
|
||
2N5457_D27Z
|
Fairchild | 完全替代 | TO-92-3 |
JFET N-CH 25V 625mW TO92
|
||
2N5457_D27Z
|
ON Semiconductor | 完全替代 | TO-226-3 |
JFET N-CH 25V 625mW TO92
|
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