Technical parameters/dissipated power: 160 W
Technical parameters/gain bandwidth product: 4 MHz
Technical parameters/minimum current amplification factor (hFE): 20
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5880
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Central Semiconductor | 功能相似 | TO-3 |
Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
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Microsemi | 功能相似 | TO-3 |
Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
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Aeroflex | 功能相似 |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
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Microchip | 功能相似 | Tray |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
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JANTX2N5672
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Microsemi | 功能相似 | TO-3 |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
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Microchip | 功能相似 |
Trans GP BJT NPN 400V 15A 3Pin(2+Tab) TO-3
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JANTX2N6675
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Microsemi | 功能相似 | TO-3 |
Trans GP BJT NPN 400V 15A 3Pin(2+Tab) TO-3
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JANTXV2N5672
|
Microsemi | 功能相似 | TO-3 |
NPN大功率硅晶体管 NPN HIGH POWER SILICON TRANSISTOR
|
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