Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.6A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-78
External dimensions/packaging: TO-78
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N5793
|
Microsemi | 完全替代 | TO-78 |
NPN硅晶体管双 NPN SILICON DUAL TRANSISTOR
|
||
2N5793
|
ETC1 | 完全替代 |
NPN硅晶体管双 NPN SILICON DUAL TRANSISTOR
|
|||
|
|
Microsemi | 完全替代 | TO-78 |
NPN硅晶体管双 NPN SILICON DUAL TRANSISTOR
|
||
|
|
Central Semiconductor | 完全替代 | TO-78-6 |
NPN硅晶体管双 NPN SILICON DUAL TRANSISTOR
|
||
|
|
Microsemi | 完全替代 | TO-78 |
TO-78 NPN 40V 0.6A
|
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